IndiumV3, France, Analysis, bibRecord, 001105

Subsurface Dimerization in III-V Semiconductor (001) Surfaces

Identifieur interne : 001105 ( France/Analysis ); précédent : 001104; suivant : 001106

Subsurface Dimerization in III-V Semiconductor (001) Surfaces

Auteurs : RBID : Pascal:01-0173584

Descripteurs français

Pascal (Inist)
- 6835B, 6110, 8105E, Etude expérimentale, Indium composé, Antimoine composé, Gallium arséniure, Reconstruction surface, Structure atomique, STM.

English descriptors

KwdEn :
- Antimony compounds, Atomic structure, Experimental study, Gallium arsenides, Indium compounds, STM, Surface reconstruction.

Abstract

We present the atomic structure of the c(8×2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group III atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8×2) reconstructions of III-V semiconductors can be described in a unified model.

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Subsurface Dimerization in III-V Semiconductor (001) Surfaces</title>
<author><name sortKey="Kumpf, C" uniqKey="Kumpf C">C. Kumpf</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Condensed Matter Physics and Chemistry Department, Riso¬ National Laboratory, DK-4000 Roskilde, Denmark</s1>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Danemark</country>
<wicri:regionArea>Condensed Matter Physics and Chemistry Department, Riso¬ National Laboratory, DK-4000 Roskilde</wicri:regionArea>
<wicri:noRegion>DK-4000 Roskilde</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Marks, L D" uniqKey="Marks L">L. D. Marks</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Material Science and Engineering, Northwestern University, Evanston, Illinois 60208</s1>
<sZ>2 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Illinois</region>
</placeName>
<wicri:cityArea>Department of Material Science and Engineering, Northwestern University, Evanston</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Ellis, D" uniqKey="Ellis D">D. Ellis</name>
<affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Chemistry, Northwestern University, Evanston, Illinois 60208</s1>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Illinois</region>
</placeName>
<wicri:cityArea>Department of Chemistry, Northwestern University, Evanston</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Smilgies, D" uniqKey="Smilgies D">D. Smilgies</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Condensed Matter Physics and Chemistry Department, Riso¬ National Laboratory, DK-4000 Roskilde, Denmark</s1>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Danemark</country>
<wicri:regionArea>Condensed Matter Physics and Chemistry Department, Riso¬ National Laboratory, DK-4000 Roskilde</wicri:regionArea>
<wicri:noRegion>DK-4000 Roskilde</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Landemark, E" uniqKey="Landemark E">E. Landemark</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Condensed Matter Physics and Chemistry Department, Riso¬ National Laboratory, DK-4000 Roskilde, Denmark</s1>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Danemark</country>
<wicri:regionArea>Condensed Matter Physics and Chemistry Department, Riso¬ National Laboratory, DK-4000 Roskilde</wicri:regionArea>
<wicri:noRegion>DK-4000 Roskilde</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Nielsen, M" uniqKey="Nielsen M">M. Nielsen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Condensed Matter Physics and Chemistry Department, Riso¬ National Laboratory, DK-4000 Roskilde, Denmark</s1>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Danemark</country>
<wicri:regionArea>Condensed Matter Physics and Chemistry Department, Riso¬ National Laboratory, DK-4000 Roskilde</wicri:regionArea>
<wicri:noRegion>DK-4000 Roskilde</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Feidenhansl, R" uniqKey="Feidenhansl R">R. Feidenhansl</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Condensed Matter Physics and Chemistry Department, Riso¬ National Laboratory, DK-4000 Roskilde, Denmark</s1>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Danemark</country>
<wicri:regionArea>Condensed Matter Physics and Chemistry Department, Riso¬ National Laboratory, DK-4000 Roskilde</wicri:regionArea>
<wicri:noRegion>DK-4000 Roskilde</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zegenhagen, J" uniqKey="Zegenhagen J">J. Zegenhagen</name>
<affiliation wicri:level="3"><inist:fA14 i1="04"><s1>European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France</s1>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">France</country>
<wicri:regionArea>European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Grenoble</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Bunk, O" uniqKey="Bunk O">O. Bunk</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>II.  Institut fur Experimentalphysik, Universitat Hamburg, D-22761 Hamburg, Germany</s1>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>II.  Institut fur Experimentalphysik, Universitat Hamburg, D-22761 Hamburg</wicri:regionArea>
<wicri:noRegion>22761 Hamburg</wicri:noRegion>
<wicri:noRegion>D-22761 Hamburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zeysing, J H" uniqKey="Zeysing J">J. H. Zeysing</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>II.  Institut fur Experimentalphysik, Universitat Hamburg, D-22761 Hamburg, Germany</s1>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>II.  Institut fur Experimentalphysik, Universitat Hamburg, D-22761 Hamburg</wicri:regionArea>
<wicri:noRegion>22761 Hamburg</wicri:noRegion>
<wicri:noRegion>D-22761 Hamburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Su, Y" uniqKey="Su Y">Y. Su</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>II.  Institut fur Experimentalphysik, Universitat Hamburg, D-22761 Hamburg, Germany</s1>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>II.  Institut fur Experimentalphysik, Universitat Hamburg, D-22761 Hamburg</wicri:regionArea>
<wicri:noRegion>22761 Hamburg</wicri:noRegion>
<wicri:noRegion>D-22761 Hamburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Johnson, R L" uniqKey="Johnson R">R. L. Johnson</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>II.  Institut fur Experimentalphysik, Universitat Hamburg, D-22761 Hamburg, Germany</s1>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>II.  Institut fur Experimentalphysik, Universitat Hamburg, D-22761 Hamburg</wicri:regionArea>
<wicri:noRegion>22761 Hamburg</wicri:noRegion>
<wicri:noRegion>D-22761 Hamburg</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">01-0173584</idno>
<date when="2001-04-16">2001-04-16</date>
<idno type="stanalyst">PASCAL 01-0173584 AIP</idno>
<idno type="RBID">Pascal:01-0173584</idno>
<idno type="wicri:Area/Main/Corpus">011570</idno>
<idno type="wicri:Area/Main/Repository">010251</idno>
<idno type="wicri:Area/France/Extraction">001105</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0031-9007</idno>
<title level="j" type="abbreviated">Phys. rev. lett.</title>
<title level="j" type="main">Physical review letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antimony compounds</term>
<term>Atomic structure</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Indium compounds</term>
<term>STM</term>
<term>Surface reconstruction</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>6835B</term>
<term>6110</term>
<term>8105E</term>
<term>Etude expérimentale</term>
<term>Indium composé</term>
<term>Antimoine composé</term>
<term>Gallium arséniure</term>
<term>Reconstruction surface</term>
<term>Structure atomique</term>
<term>STM</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We present the atomic structure of the c(8×2)  reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group III atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8×2)  reconstructions of III-V semiconductors can be described in a unified model.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0031-9007</s0>
</fA01>
<fA02 i1="01"><s0>PRLTAO</s0>
</fA02>
<fA03 i2="1"><s0>Phys. rev. lett.</s0>
</fA03>
<fA05><s2>86</s2>
</fA05>
<fA06><s2>16</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Subsurface Dimerization in III-V Semiconductor (001) Surfaces</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>KUMPF (C.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>MARKS (L. D.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>ELLIS (D.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>SMILGIES (D.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>LANDEMARK (E.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>NIELSEN (M.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>FEIDENHANSL (R.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>ZEGENHAGEN (J.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>BUNK (O.)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>ZEYSING (J. H.)</s1>
</fA11>
<fA11 i1="11" i2="1"><s1>SU (Y.)</s1>
</fA11>
<fA11 i1="12" i2="1"><s1>JOHNSON (R. L.)</s1>
</fA11>
<fA14 i1="01"><s1>Condensed Matter Physics and Chemistry Department, Riso¬ National Laboratory, DK-4000 Roskilde, Denmark</s1>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Material Science and Engineering, Northwestern University, Evanston, Illinois 60208</s1>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Chemistry, Northwestern University, Evanston, Illinois 60208</s1>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France</s1>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="05"><s1>II.  Institut fur Experimentalphysik, Universitat Hamburg, D-22761 Hamburg, Germany</s1>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
</fA14>
<fA20><s1>3586-3589</s1>
</fA20>
<fA21><s1>2001-04-16</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>8895</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2001 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>01-0173584</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Physical review letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We present the atomic structure of the c(8×2)  reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group III atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8×2)  reconstructions of III-V semiconductors can be described in a unified model.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H35B</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60A10</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>6835B</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>6110</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>8105E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Antimoine composé</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Antimony compounds</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Reconstruction surface</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Surface reconstruction</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Structure atomique</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Atomic structure</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>STM</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>STM</s0>
</fC03>
<fN21><s1>113</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0116M000897</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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   |texte=   Subsurface Dimerization in III-V Semiconductor (001) Surfaces
}}

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Subsurface Dimerization in III-V Semiconductor (001) Surfaces

Subsurface Dimerization in III-V Semiconductor (001) Surfaces

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri